InSe: a two-dimensional material with strong interlayer coupling

Author:

Sun Yuanhui1234,Luo Shulin1234,Zhao Xin-Gang1234,Biswas Koushik567ORCID,Li Song-Lin8910114,Zhang Lijun123412ORCID

Affiliation:

1. Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering

2. Jilin University

3. Changchun 130012

4. China

5. Department of Chemistry and Physics

6. Arkansas State University

7. USA

8. National Laboratory of Solid State Microstructures

9. School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures

10. Nanjing University

11. Nanjing 210023

12. State Key Laboratory of Superhard Materials

Abstract

Interlayer coupling in atomically thin, two-dimensional indium selenide (InSe) may have a significant impact on its properties, including large tunability in the band gap, height of band-edge state, phonon frequency, and high carrier mobility.

Funder

National Natural Science Foundation of China

U.S. Department of Homeland Security

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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