Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy-Reference-Cited by-同舟云学术

Characterization of SiC-grown epitaxial graphene microislands using tip-enhanced Raman spectroscopy

Published:2015 Issue:43 Volume:17 Page:28993-28999
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Vantasin Sanpon¹²³⁴⁵,Tanaka Yoshito⁶⁷⁸⁵,Uemura Shohei¹²³⁴⁵,Suzuki Toshiaki⁹¹⁰⁵,Kutsuma Yasunori¹¹²³⁴⁵,Doujima Daichi¹¹²³⁴⁵,Kaneko Tadaaki¹¹²³⁴⁵,Ozaki Yukihiro¹²³⁴⁵

Affiliation:

1. Department of Chemistry

2. School of Science and Technology

3. Kwansei Gakuin University

4. Sanda

5. Japan

6. Institute of Industrial Science

7. The University of Tokyo

8. Tokyo 153-8505

9. UNISOKU Co. Ltd

10. Hirakata

11. Department of Physics

Abstract

Tip-enhanced Raman spectroscopy of the nanoridge of a graphene island.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP05014F

Reference64 articles.

1. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

3. 4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures

4. Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer

5. AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of inhomogeneity at edges of graphene oxide films using tip‐enhanced Raman spectroscopy;Journal of Raman Spectroscopy;2022-05-12

2. Electric field analysis, polarization, excitation wavelength dependence, and novel applications of tip‐enhanced Raman scattering;Journal of Raman Spectroscopy;2021-06-23

3. Interactions Between Epitaxial Graphene Grown on the Si- and C-Faces of 4H-SiC Investigated Using Raman Imaging and Tip-Enhanced Raman Scattering;Applied Spectroscopy;2020-08-17

4. Probing Spatial Phonon Correlation Length in Post-Transition Metal Monochalcogenide GaS Using Tip-Enhanced Raman Spectroscopy;Nano Letters;2019-08-30

5. Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC;Nanomaterials;2019-03-05