Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer-Reference-Cited by-同舟云学术

Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer

Published:2012-11-20 Issue:12 Volume:6 Page:10893-10900
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Velez-Fort Emilio¹²,Mathieu Claire¹,Pallecchi Emiliano¹,Pigneur Marine¹,Silly Mathieu G.³,Belkhou Rachid³,Marangolo Massimiliano⁴,Shukla Abhay²,Sirotti Fausto³,Ouerghi Abdelkarim¹

Affiliation:

1. Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France

2. Université Pierre et Marie Curie (CNRS-IMPMC), 4 Pl. Jussieu, 75005 Paris, France

3. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France

4. Institut des NanoSciences de Paris, UPMC-CNRS, UMR 7588, 4 Pl. Jussieu, 75005 Paris, France

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn304315z

Reference41 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Room-Temperature Quantum Hall Effect in Graphene

3. Hot Electron Cooling by Acoustic Phonons in Graphene

4. Scalable templated growth of graphene nanoribbons on SiC

5. Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

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