Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers-Reference-Cited by-同舟云学术

Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

Published:2012-06-22 Issue:7 Volume:6 Page:6075-6082
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ouerghi Abdelkarim¹,Silly Mathieu G.²,Marangolo Massimiliano³,Mathieu Claire¹,Eddrief Mahmoud³,Picher Matthieu¹,Sirotti Fausto²,El Moussaoui Souliman²,Belkhou Rachid²

Affiliation:

1. Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France

2. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France

3. Institut des NanoSciences de Paris, UPMC−CNRS, UMR 7588, 4 Place Jussieu, 75005 Paris, France

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn301152p

Reference34 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Room-Temperature Quantum Hall Effect in Graphene

4. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

5. Scalable templated growth of graphene nanoribbons on SiC

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