Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen-Reference-Cited by-同舟云学术

Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen

Published:2018 Issue:16 Volume:6 Page:6922-6930
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ebaid Mohamed¹²³,Min Jung-Wook¹²³,Zhao Chao¹²³^ORCID,Ng Tien Khee¹²³^ORCID,Idriss Hicham⁴³^ORCID,Ooi Boon S.¹²³

Affiliation:

1. Photonics Laboratory

2. King Abdullah University of Science and Technology (KAUST)

3. Saudi Arabia

4. SABIC-Corporate Research and Development Center (CRD) at KAUST

Abstract

InGaN NWs were grown on a metallic Ti/Si template that improved the photoelectrochemical performance and stability, and reduced the interfacial transfer resistance.

Funder

Saudi Basic Industries Corporation

King Abdullah University of Science and Technology

King Abdulaziz City for Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TA/C7TA11338B

Reference30 articles.

1. Complete composition tunability of InGaN nanowires using a combinatorial approach