ScGaN and ScAlN: emerging nitride materials-Reference-Cited by-同舟云学术

ScGaN and ScAlN: emerging nitride materials

Published:2014 Issue:17 Volume:2 Page:6042-6050
ISSN:2050-7488
Container-title:J. Mater. Chem. A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Moram M. A.¹²³,Zhang S.⁴⁵⁶

Affiliation:

1. Dept. Materials

2. Imperial College London

3. London SW7 2AZ, UK

4. Dept. Materials Science & Metallurgy

5. University of Cambridge

6. Cambridge, UK

Abstract

ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TA/C3TA14189F

Reference93 articles.

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5. Piezoelectric aluminum nitride thin films for microelectromechanical systems

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