Valley polarization and ferroelectricity in a two-dimensional GaAsC6 monolayer
Author:
Affiliation:
1. School of Physics and State Key Laboratory of Crystal Materials
2. Shandong University
3. Jinan 250100
4. China
5. School of Physics and Electrical Engineering
Abstract
The coexistence of valley polarization and ferroelectricity was demonstrated in a two-dimensional hybrid structure of GaAs and graphene. The integration of valley polarization and ferroelectricity in a single material offers a promising platform for the design of electronic devices.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CP/C8CP07444E
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