Controlling the Electronic Structure of Bilayer Graphene-Reference-Cited by-同舟云学术

Controlling the Electronic Structure of Bilayer Graphene

Published:2006-08-18 Issue:5789 Volume:313 Page:951-954
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Ohta Taisuke¹²³,Bostwick Aaron¹²³,Seyller Thomas¹²³,Horn Karsten¹²³,Rotenberg Eli¹²³

Affiliation:

1. Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, USA.

2. Department of Molecular Physics, Fritz-Haber-Institut, der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany.

3. Institut für Physik der Kondensierten Materie, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-91058 Erlangen, Germany.

Abstract

We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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