Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors-Reference-Cited by-同舟云学术

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

Published:2020 Issue:2 Volume:1 Page:167-176
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Kirmani Ahmad R.¹²³⁴^ORCID,Roe Emily F.¹²³⁴,Stafford Christopher M.¹²³⁴^ORCID,Richter Lee J.¹²³⁴^ORCID

Affiliation:

1. Materials Science and Engineering Division

2. National Institute of Standards and Technology (NIST)

3. Gaithersburg

4. USA

Abstract

Process-structure-transport relationships in low-temperature-processed, blade-coated In₂O₃ transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm² V⁻¹ s⁻¹ is achieved at ≈220 °C.

Funder

National Institute of Standards and Technology

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Microbiology

Link

http://pubs.rsc.org/en/content/articlepdf/2020/MA/D0MA00072H

Reference38 articles.

1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2. Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing