Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2-Reference-Cited by-同舟云学术

Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

Published:2021 Issue:1 Volume:9 Page:117-126
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Keukelier Jonas¹²³⁴^ORCID,Opsomer Karl⁵⁶⁴,Nuytten Thomas⁵⁶⁴,Sergeant Stefanie⁵⁶⁴,Devulder Wouter⁵⁶⁴,Clima Sergiu⁵⁶⁴,Goux Ludovic⁵⁶⁴,Kar Gouri Sankar⁵⁶⁴,Detavernier Christophe¹²³⁴

Affiliation:

1. Department of Solid State Sciences

2. Ghent University

3. Ghent

4. Belgium

5. Imec

6. Leuven

Abstract

Raman spectroscopy and electrical measurements are performed on sputtered Ge_xSe_1−x thin films to identify and link bond presence to electrical behaviour.

Funder

Bijzonder Onderzoeksfonds

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04086J

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