Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer-Reference-Cited by-同舟云学术

Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer

Published:2019 Issue:27 Volume:21 Page:4036-4041
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Kim Jaemyung¹²³⁴⁵,Seo Okkyun¹²³⁴⁵,Tanaka Atsushi⁶⁷⁸⁹¹⁰,Chen Jun¹²³⁴⁵,Watanabe Kenji¹²³⁴⁵^ORCID,Katsuya Yoshio¹¹¹²¹³¹⁴¹⁵^ORCID,Nabatame Toshihide¹²³⁴⁵,Irokawa Yoshihiro¹²³⁴⁵,Koide Yasuo¹²³⁴⁵,Sakata Osami¹²³⁴⁵^ORCID

Affiliation:

1. Center for GaN Characterization

2. Research Network and Facility Services Division (RNFS)

3. National Institute for Materials Science (NIMS)

4. Tsukuba

5. 305-0047 Japan

6. Innovative Devices Section

7. Center for Integrated Research of Future Electronics

8. Institute of Materials and Systems for Sustainability

9. Nagoya University Furocho

10. Nagoya

11. Synchrotron X-ray Group

12. Research Center for Advanced Measurement and Characterization

13. NIMS

14. Sayo

15. 679-5148 Japan

Abstract

We have observed anisotropic mosaicity of an m-plane GaN homoepitaxial layer by X-ray diffraction topography imaging over a wafer and X-ray rocking curves measured at various wafer points.

Funder

National Research Foundation of Korea

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00463G

Reference31 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films