Fabrication of locally thinned down silicon nanowires
Author:
Affiliation:
1. Ian Wark Research Institute
2. University of South Australia
3. Mawson Lakes Campus
4. , Australia
5. Peter Grünberg Institute
6. Forschungszentrum Juelich GmbH
7. Juelich, Germany
Abstract
A new top-down fabrication process is described to prepare at the wafer-scale locally thinned down silicon nanowire field-effect devices.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00046C
Reference28 articles.
1. Quantum Confinement Induced Performance Enhancement in Sub-5-nm Lithographic Si Nanowire Transistors
2. High Performance Silicon Nanowire Field Effect Transistors
3. Silicon Nanowire Transistors with a Channel Width of 4 nm Fabricated by Atomic Force Microscope Nanolithography
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