High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication-Reference-Cited by-同舟云学术

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High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication

Published:2019 Issue:12 Volume:1 Page:4870-4877
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Pham Thuy Thi Thanh¹²³⁴⁵^ORCID,Tran Duy Phu¹²³⁴⁵^ORCID,Thierry Benjamin¹²³⁴⁵^ORCID

Affiliation:

1. Future Industries Institute

2. ARC Centre of Excellence in Convergent Bio-Nano Science and Technology

3. University of South Australia

4. Mawson Lakes

5. Australia

Abstract

High performance indium oxide nanoribbon FETs: mitigating device-to-device signal variation in the subthreshold regime.

Funder

Australian Research Council

Australia Awards

University of South Australia

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NA/C9NA00592G

Reference59 articles.

1. CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

2. Silicon nanowire biosensor and its applications in disease diagnostics: A review

3. Silicon nanowire field-effect transistor-based biosensors for biomedical diagnosis and cellular recording investigation

4. Silicon nanowires as field-effect transducers for biosensor development: A review

5. Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species

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