Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate-Reference-Cited by-同舟云学术

Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate

Published:2021 Issue:44 Volume:23 Page:25284-25290
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Abbas Muhammad Sabbtain¹²^ORCID,Srivastava Pawan Kumar³^ORCID,Hassan Yasir⁴,Lee Changgu³⁴^ORCID

Affiliation:

1. Department of Physics, Sungkyunkwan University, Suwon 16419, South Korea

2. Centre for Advanced Studies in Physics (CASP), Government College University Lahore, 54000, Pakistan

3. School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea

4. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea

Abstract

Temperature dependent electrical/magneto-transport measurements on few layer graphene grown directly onto dielectric substrates reveal weak localization, charge carrier asymmetry and phonon limited carrier mobility.

Funder

National Research Foundation of Korea

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP03225A

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