In Situ Growth of Graphene on Polyimide for High-Responsivity Flexible PbS–Graphene Photodetectors

Author:

Hu Liangchen1,Deng Jun1ORCID,Xie Yiyang1,Qian Fengsong1,Dong Yibo2,Xu Chen1

Affiliation:

1. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China

2. Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China

Abstract

Graphene is an ideal material for flexible optoelectronic devices due to its excellent electrical and optical properties. However, the extremely high growth temperature of graphene has greatly limited the direct fabrication of graphene-based devices on flexible substrates. Here, we have realized in situ growth of graphene on a flexible polyimide substrate. Based on the multi-temperature-zone chemical vapor deposition cooperated with bonding a Cu-foil catalyst onto the substrate, the growth temperature of graphene was controlled at only 300 °C, enabling the structural stability of polyimide during growth. Thus, large-area high-quality monolayer graphene film was successfully in situ grown on polyimide. Furthermore, a PbS–graphene flexible photodetector was fabricated using the graphene. The responsivity of the device reached 105 A/W with 792 nm laser illumination. The in-situ growth ensures good contact between graphene and substrate; therefore, the device performance can remain stable after multiple bending. Our results provide a highly reliable and mass-producible path for graphene-based flexible devices.

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Beijing Nova Program

Shanghai Super Postdoctoral Incentive Program and China Postdoctoral Science Foundation

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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