Electronic and magnetic properties of GeS monolayer effected by point defects and doping-Reference-Cited by-同舟云学术

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Electronic and magnetic properties of GeS monolayer effected by point defects and doping

Published:2024 Issue:4 Volume:14 Page:2481-2490
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Bui Phuong Thuy¹²,Van On Vo³,Guerrero-Sanchez J.⁴,Hoat D. M.¹⁵^ORCID

Affiliation:

1. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

2. Faculty of Pharmacy, Duy Tan University, Da Nang 550000, Vietnam

3. Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Binh Duong Province, Vietnam

4. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

5. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

Abstract

The effect of point defects (vacancy and antisites) and doping (with transition metals and pnictogen atoms) on GeS monolayer electronic and magnetic properties are systematically investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA07942B

Reference61 articles.

1. Moore's law: past, present and future

2. Nanoelectronics from the bottom up

3. Molecular Electronics

4. The Genesis of Molecular Electronics

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