Antiferromagnetism in GaS monolayer doped with TM–TM atom pairs (TM = V, Cr, Mn, and Fe)-Reference-Cited by-同舟云学术

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Antiferromagnetism in GaS monolayer doped with TM–TM atom pairs (TM = V, Cr, Mn, and Fe)

Published:2024 Issue:27 Volume:26 Page:18657-18666
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Hoat D. M.¹²^ORCID,Tien Nguyen Thanh³^ORCID,Nguyen Duy Khanh⁴⁵^ORCID,Guerrero-Sanchez J.⁶

Affiliation:

1. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

2. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

3. College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City 900000, Vietnam

4. Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam

5. Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City, Vietnam

6. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

Abstract

Antiferromagnetism in GaS monolayer doped with a pair of transition metal atoms.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP01119H

Reference61 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Silicene field-effect transistors operating at room temperature

4. Electronic properties of germanane field-effect transistors

5. A Perspective on Recent Advances in 2D Stanene Nanosheets

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