Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer-Reference-Cited by-同舟云学术

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Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer

Published:2024-12 Issue: Volume:184 Page:108826
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Phuong Thuy Huynh Thi,Van On Vo,Ponce-Pérez R.,Guerrero-Sanchez J.,Hoat D.M.

Funder

Trường Đại Học Thủ Dầu Một

Trường Đại học Duy Tân

Publisher

Elsevier BV

Reference71 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. The rise of graphene;Geim;Nature Mater.,2007

3. Honeycomb carbon: a review of graphene;Allen;Chem. Rev.,2010

4. Silicene field-effect transistors operating at room temperature;Tao;Nat. Nanotechnol.,2015

5. Black phosphorus field-effect transistors;Li;Nat. Nanotechnol.,2014

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