Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions-Reference-Cited by-同舟云学术

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

Published:2022 Issue:24 Volume:10 Page:9334-9343
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Guo Xiaokun¹²,Yang Bing¹^ORCID,Lu Jiaqi¹²,Li Haining¹²,Huang Nan¹^ORCID,Liu Lusheng¹,Jiang Xin¹³^ORCID

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang, 110016, China

2. School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, 110016, China

3. Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Str. 9-11, Siegen, 57076, Germany

Abstract

Based on a diamond/n+-Si heterojunction, the photoluminescence of negatively-charged silicon vacancy centers in microcrystalline diamond films exhibits remarkable increase under the forward bias.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01308H

Reference46 articles.

1. Observation of an environmentally insensitive solid-state spin defect in diamond

2. Room-temperature entanglement between single defect spins in diamond

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4. Nanoscale magnetic sensing with an individual electronic spin in diamond

5. Oxygenated (113) diamond surface for nitrogen-vacancy quantum sensors with preferential alignment and long coherence time from first principles

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