Strain-mediated bandgap engineering of straight and bent semiconductor nanowires-Reference-Cited by-同舟云学术

Strain-mediated bandgap engineering of straight and bent semiconductor nanowires

Published:2021 Issue:9 Volume:23 Page:5407-5414
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lim Bryan¹²³⁴⁵^ORCID,Cui Xiang Yuan¹²³⁴⁵^ORCID,Ringer Simon P.¹²³⁴⁵^ORCID

Affiliation:

1. The University of Sydney

2. School of Aeronautical

3. Mechanical and Mechatronic Engineering and Australian Centre for Microscopy and Microanalysis

4. Sydney

5. Australia

Abstract

A simple unit-cell model capable of describing the bandgap evolution of III–V and II–VI semiconductor nanowires under strain is proposed. Three key responses upon strain are found and investigated in both wurtzite and zinc-blende polytypes.

Funder

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP00457C

Reference52 articles.

1. SEMICONDUCTOR NANOWIRES AND NANOTUBES

2. Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

3. Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires

4. Low-Temperature in Situ Large Strain Plasticity of Ceramic SiC Nanowires and Its Atomic-Scale Mechanism

5. Super Deformability and Young’s Modulus of GaAs Nanowires

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