Affiliation:
1. School of Physics and Technology Center for Electron Microscopy MOE Key Laboratory of Artificial Micro‐ and Nano‐structures and Institute for Advanced Studies Wuhan University Wuhan 430072 China
2. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information Huazhong University of Science and Technology (HUST) Wuhan Hubei 430074 China
3. Core Facility of Wuhan University Wuhan 430072 China
Abstract
AbstractTransmission electron microscopy (TEM) offers unprecedent atomic resolution imaging and diverse characterizations capabilities, which has been proved to be effective in correlating the atomic structures and compositions with the physical/chemical properties of semiconductor nanomaterials. This review aims to provide an overview of the latest advancements regarding the atomic structure/property relationship in semiconductor nanomaterials. First, by employing off‐axis electron holography, a comprehensive overview of the quantitative investigations into the atomic‐electronic structure relationship of semiconductors is presented. Second, by integrating in situ TEM technique with micro/nanoelectromechanical systems (M/NEMS), this review summarizes the recent advancements achieved in elucidating the intricate relationship between structure and properties of nanomaterials subjected to diverse stimuli such as stress, thermal, and electric fields. Moreover, the impact of electron beam irradiation on the microstructure of semiconductor nanomaterials is discussed. Lastly, current challenges and future research opportunities are proposed along with their potential applications.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Science Fund for Distinguished Young Scholars of Hubei Province
Fundamental Research Funds for the Central Universities