Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1-Reference-Cited by-同舟云学术

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1

Published:2019 Issue:36 Volume:11 Page:16978-16990
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Rosário Carlos M. M.¹²³⁴⁵^ORCID,Thöner Bo⁶⁷⁸⁹,Schönhals Alexander⁵⁷⁸⁹,Menzel Stephan¹⁰¹¹¹²⁹^ORCID,Meledin Alexander¹³⁷¹⁴⁹¹⁵^ORCID,Barradas Nuno P.¹⁶¹⁷¹⁸¹⁹⁴^ORCID,Alves Eduardo²⁰¹⁷¹⁸¹⁹⁴^ORCID,Mayer Joachim¹³⁷¹⁴⁹¹⁵^ORCID,Wuttig Matthias⁶⁷⁸⁹¹⁰^ORCID,Waser Rainer⁵⁷⁸⁹¹⁰^ORCID,Sobolev Nikolai A.¹²³⁴²¹^ORCID,Wouters Dirk J.⁵⁷⁸⁹

Affiliation:

1. Physics Department and I3N

2. University of Aveiro

3. Aveiro

4. Portugal

5. Institut für Werkstoffe der Elektrotechnik II

6. I. Physikalisches Institut IA

7. RWTH Aachen University

8. Aachen

9. Germany

10. Peter Grünberg Institute and JARA-FIT

11. Forschungszentrum Jülich GmbH

12. Jülich

13. Central Facility for Electron Microscopy

14. 52074 Aachen

15. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C)

16. Centro de Ciências e Tecnologias Nucleares

17. Instituto Superior Técnico

18. Universidade de Lisboa

19. Bobadela

20. Instituto de Plasmas e Fusão Nuclear and Laboratório de Aceleradores e Tecnologias de Radiação

21. National University of Science and Technology MISiS

Abstract

A detailed study of the electrical transport in TaO_x thin films with x ∼ 1 provides an insight into the conduction in conductive filaments inside Ta₂O₅-based resistive switching devices.

Funder

Fundação para a Ciência e a Tecnologia

Deutsche Forschungsgemeinschaft

Ministry of Education and Science of the Russian Federation

Deutscher Akademischer Austauschdienst

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR05285B

Reference77 articles.