High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer-Reference-Cited by-同舟云学术

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High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Published:2016 Issue:14 Volume:18 Page:2446-2454
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lin Yunhao,Yang Meijuan,Wang Wenliang,Lin Zhiting,Gao Junning,Li Guoqiang

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CE/C5CE02525G

Reference44 articles.

1. Substrates for gallium nitride epitaxy

2. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

3. Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

4. Radiation effects in GaN materials and devices

5. Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The enhanced GaN deposition on highly N-incorporated diamond substrate;Materials Letters;2024-09

2. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01

3. Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.;Surfaces and Interfaces;2023-08

4. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer;Scientific Reports;2023-05-31

5. High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression;Results in Physics;2023-04

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