Band engineering of Dirac materials in SbmBin lateral heterostructures-Reference-Cited by-同舟云学术

Band engineering of Dirac materials in SbmBin lateral heterostructures

Published:2021 Issue:28 Volume:11 Page:17445-17455
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Yonghui¹²³⁴⁵^ORCID

Affiliation:

1. Jiangxi Province Key Laboratory of the Causes and Control of Atmospheric Pollution

2. East China University of Technology

3. Nanchang

4. China

5. College of Water Resources and Environmental Engineering

Abstract

Band engineering the electronic structures of Sb_mBi_n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations.

Funder

East China University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA02702F

Reference59 articles.

1. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

3. Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity

4. Cation exchange synthesis of two-dimensional vertical Cu2S/CdS heterojunctions for photovoltaic device applications

5. Topological mosaics in moiré superlattices of van der Waals heterobilayers

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