Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors-Reference-Cited by-同舟云学术

Self-catalyst β-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

Published:2021 Issue:45 Volume:11 Page:28326-28331
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wu Yutong¹²^ORCID,Feng Shuanglong²³^ORCID,Zhang Miaomiao²³,Kang Shuai²^ORCID,Zhang Kun¹²^ORCID,Tao Zhiyong⁴,Fan Yaxian⁴,Lu Wenqiang²³^ORCID

Affiliation:

1. Key Laboratory of In-Fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, PR China

2. Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, PR China

3. University of Chinese Academy of Sciences, Beijing 100049, China

4. Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin 541004, China

Abstract

Monoclinic gallium oxide (β-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (wavelength from 200 nm to 280 nm).

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA04663B

Reference55 articles.