High Photo-Responsivity Deep-UV Detector Based on Binary SnO2-Ga2O3 Compound Nanowires Array-Reference-Cited by-同舟云学术

High Photo-Responsivity Deep-UV Detector Based on Binary SnO₂-Ga₂O₃ Compound Nanowires Array

Published:2024-01-01 Issue:1 Volume:36 Page:47-50
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Li Lei¹,Liu Zeng¹^ORCID,Yao Su-Hao¹,Hu Ji¹,Zhang Mao-Lin¹^ORCID,Yang Li-Li¹^ORCID,Li Shan¹^ORCID,Guo Yu-Feng¹^ORCID,Tang Wei-Hua¹^ORCID

Affiliation:

1. National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies and the Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/68/10330211/10323497.pdf?arnumber=10323497

Reference21 articles.

1. Self-powered multifunctional UV and IR photodetector as an artificial electronic eye

2. Pyro-Photoelectric Effect Enhanced Dual-Mode Self-Powered ITO/ZnO:Ga Microwire/AlGaN Thin-Film Heterojuncted Ultraviolet Imaging Photodetector

3. Solar-blind UV communication based on sensitive β -Ga2O3 photoconductive detector array

4. Comprehensive Study on Ultra-Wide Band Gap La₂O₃/ε-Ga₂O₃ p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing

5. Boosting β-Ga₂O₃ Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance

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