Ultrafast Self-Powered Solar-Blind Ultraviolet Photodetector Based on Ga2O3 Microwire/GaN p-n Heterojunction Using a Single-Layer Graphene as Electrode
Author:
Affiliation:
1. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing, China
Funder
National Natural Science Foundation of China
Postgraduate Research and Practice Innovation Program of NUAA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/7361/10577556/10539062.pdf?arnumber=10539062
Reference50 articles.
1. Ultra‐High Performance Amorphous Ga 2 O 3 Photodetector Arrays for Solar‐Blind Imaging
2. Wafer-sized polycrystalline diamond photodetector planar arrays for solar-blind imaging
3. Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection
4. Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport
5. Bandwidth limits of luminescent solar concentrators as detectors in free-space optical communication systems
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1. A 326 Nm Pure Ultraviolet Light Sources Achieved in a Ga2o3 Microwire Heterojunction Through Interface Optimization and Surface-Modification;2024
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