Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity

Author:

Zhang Hui1,Wang Zihan1,Chen Jiawang23,Tan Chaoyang1,Yin Shiqi1,Zhang Hanlin1,Wang Shaotian1,Qin Qinggang1,Li Liang123ORCID

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China

2. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China

3. University of Science and Technology of China, Hefei 230026, P.R. China

Abstract

A high-performance photodetector based on type-I PtS2/MoS2 van der Waals heterojunction is introduced. The photovoltaic effect and the photocurrent of this heterojunction can be effectively modulated by the negative gate voltage.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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