Type-I PtS<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity-Reference-Cited by-同舟云学术

Type-I PtS₂/MoS₂ van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity

Published:2022 Issue:43 Volume:14 Page:16130-16138
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Hui¹,Wang Zihan¹,Chen Jiawang²³,Tan Chaoyang¹,Yin Shiqi¹,Zhang Hanlin¹,Wang Shaotian¹,Qin Qinggang¹,Li Liang¹²³^ORCID

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China

2. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China

3. University of Science and Technology of China, Hefei 230026, P.R. China

Abstract

A high-performance photodetector based on type-I PtS2/MoS2 van der Waals heterojunction is introduced. The photovoltaic effect and the photocurrent of this heterojunction can be effectively modulated by the negative gate voltage.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR04231B

Reference43 articles.

1. Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

2. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions