Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions-Reference-Cited by-同舟云学术

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Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions

Published:2017 Issue:30 Volume:9 Page:10733-10740
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Bin¹²³⁴,Yang Shengxue¹²³⁴^ORCID,Wang Cong⁵⁶⁴,Wu Minghui⁷⁸⁹⁴,Huang Li⁷⁸⁹⁴,Liu Qian⁵⁶⁴,Jiang Chengbao¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Beihang University

3. Beijing 100191

4. P.R. China

5. National Center for Nanoscience and Technology

6. Beijing 100190

7. Department of Physics

8. South University of Science and Technology of China

9. Shenzhen 518005

Abstract

The vertically stacked MoTe₂/MoS₂ p–n heterojunctions have excellent electronic and optoelectronic characteristics with a type-II band alignment.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR03445H

Reference42 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Single-layer MoS2 transistors

4. Single-Layer MoS2 Phototransistors

5. Van der Waals heterostructures

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2. Polarized Photodetectors Based on 2D 2H‐MoTe₂/1T'‐MoTe₂/MoSe₂ Van Der Waals Heterojunction;Advanced Functional Materials;2024-06-17

3. Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures;Materials Advances;2024

4. Self-Powered Photodetector with High Photocurrent and Polarization Sensitivity Based on the Gan/Cdo Heterostructure;2024

5. High performance self-powered photodetector based on van der Waals heterojunction;Nanotechnology;2023-11-03

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