Interplay of VLS and VS growth mechanism for GaN nanowires by a self-catalytic approach
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2012/RA/C2RA01000C
Reference25 articles.
1. Single gallium nitride nanowire lasers
2. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
3. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
4. 0.25 $\mu\hbox{m}$ Self-Aligned AlGaN/GaN High Electron Mobility Transistors
5. Gallium Nitride Nanowire Nanodevices
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