Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility-Reference-Cited by-同舟云学术

Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

Published:2022 Issue:23 Volume:6 Page:3589-3597
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Shen Junyu¹^ORCID,Wang Guan²,Xue Fei¹,Zhu Dingwei¹,Li Yang³^ORCID,Zhou Feng¹,Zhang Qijian¹^ORCID

Affiliation:

1. School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P. R. China

2. College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P. R. China

3. School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

Abstract

A novel polymer was designed through introducing appropriate spacer, tuning pendent ratios and applying random copolymerization to optimize the surface morphology, rendering a device with clear switching mechanism and high stability/reproducibility.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/QM/D2QM00831A

Reference47 articles.

1. A Small-Molecule-Based Ternary Data-Storage Device

2. Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices

3. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

4. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

5. Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes

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