Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes-Reference-Cited by-同舟云学术

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Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes

Published:2012-04-20 Issue:5 Volume:12 Page:2217-2221
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hwang Sun Kak¹,Lee Ju Min¹,Kim Seungjun¹,Park Ji Sun¹,Park Hyung Il¹,Ahn Chi Won²,Lee Keon Jae¹,Lee Takhee³,Kim Sang Ouk¹

Affiliation:

1. Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea

2. National Nanofab Center (NNFC), Daejeon 305-701, Republic of Korea

3. Department of Physics and Astronomy, Seoul National University, Gwanak-gu, Seoul 151-742, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl204039q

Reference40 articles.

1. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

2. Nonvolatile Memory Elements Based on Organic Materials

3. Control of thin ferroelectric polymer films for non-volatile memory applications

4. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

5. Nanoionics-based resistive switching memories

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4. Synergistic Effects of Hybrid N-Doping on the Thermoelectric Performance and Air-Stability of Water-Processable Single-Walled Carbon Nanotubes;2024

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