Affiliation:
1. Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education Taiyuan University of Technology Taiyuan 030024 P. R. China
2. School of Advanced Technology Xi'an Jiaotong‐Liverpool University Suzhou 215123 P. R. China
3. Department of Electrical Engineering and Electronics University of Liverpool Liverpool L69 72Z UK
4. College of Materials Science and Engineering Taiyuan University of Technology Taiyuan 030024 P. R. China
Abstract
AbstractCarbon quantum dots‐based memristors (CQDMs) have emerged as a rising star in data storage and computing. The key constraint to their commercialization is memristance variability, which mainly arises from the disordered conductive paths. Doping methodology can optimize electron and ion transport to help construct a stable conductive mode. Herein, based on boron (B)‐doped engineering strategy, three kinds of comparable quantum dots are synthesized, including carbon quantum dots (CQDs), a series of boron‐doped CQDs (BCQDs) with different B contents, and boron quantum dots. The corresponding device performances highlight the superiority of BCQDs‐based memristors, exhibiting a ternary flash‐type memory behavior with longer retention time and more controllable memristance stability. The comprehensive analysis results, including device performance, functional layer morphology, and material simulated calculation, illustrate that the doped B elements can directionally guide the migration of aluminum ions by enhancing the capture of free electrons, resulting in ordered conductive filaments and stable ternary memory behavior. Finally, the conceptual applications of logic display and logic gate are discussed, indicating a bright prospect for BCQDs‐based memristors. This work proves that modest B doping can optimize memristance property, establishing a theoretical foundation and template scheme for developing effective and stable CQDMs.
Funder
Shanxi Scholarship Council of China
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering
Subject
General Materials Science,General Chemistry