Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors
Author:
Affiliation:
1. Werkstoffe und Nanoelektronik
2. Ruhr-Universität Bochum
3. 44801 Bochum
4. Germany
5. Evonik Industries AG
6. 45772 Marl
7. Mikrosystemtechnik, Ruhr-Universität Bochum
Abstract
We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06270F
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