Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors-Reference-Cited by-同舟云学术

Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

Published:2019 Issue:25 Volume:7 Page:7627-7635
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jaehnike Felix¹²³⁴,Pham Duy Vu⁵⁶⁴,Bock Claudia¹²³⁴⁷^ORCID,Kunze Ulrich¹²³⁴^ORCID

Affiliation:

1. Werkstoffe und Nanoelektronik

2. Ruhr-Universität Bochum

3. 44801 Bochum

4. Germany

5. Evonik Industries AG

6. 45772 Marl

7. Mikrosystemtechnik, Ruhr-Universität Bochum

Abstract

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06270F

Reference42 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Metal oxides for optoelectronic applications

3. High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

4. Solution-processable metal oxide semiconductors for thin-film transistor applications

5. Toward High-Performance Amorphous GIZO TFTs

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors;Small;2024-07-25

2. Engineering a Solution-Processed In₂O₃ TFT With Improved Ambient Stability via MoO₃ Doping;IEEE Transactions on Electron Devices;2024-03

3. Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors;Journal of Electrical Engineering & Technology;2023-11-08

4. Doping of Indium Oxide Semiconductor Film Prepared Using an Environmentally Friendly Aqueous Solution Process with Sub-1% Molybdenum to Improve Device Performance and Stability;ACS Applied Electronic Materials;2023-08-04

5. Electrical Performance Enhancement and Low-Frequency Noise Estimation of In₂O₃-Based Thin Film Transistor Based on Doping Engineering;IEEE Transactions on Electron Devices;2023-01