Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity
Author:
Affiliation:
1. Thin Film Materials Research Center
2. Korea Research Institute of Chemical Technology
3. Yuseong-gu
4. Daejeon 34114
5. Republic of Korea
6. MAPS R&D Center
7. Advanced Materials Division, Mecaro Co., Ltd
8. Eumseong-gun
Abstract
The incubation cycle free ALD Ru film was deposited using an open-coordinated structured Ru(ii) precursor, Ru(η5-cycloheptadienyl)2.
Funder
Korea Research Institute of Chemical Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05682K
Reference25 articles.
1. Chemical vapor deposition of ruthenium and osmium thin films using (hexafluoro-2-butyne)tetracarbonylruthenium and -osmium
2. Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas
3. (Ba,Sr)TiO3 thin films for ultra large scale dynamic random access memory.
4. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition
5. Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
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