Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas-Reference-Cited by-同舟云学术

Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

Published:2010-09-28 Issue:20 Volume:22 Page:5700-5706
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Han Jeong Hwan¹,Lee Sang Woon¹,Kim Seong Keun¹,Han Sora¹,Hwang Cheol Seong¹,Dussarrat Christian²,Gatineau Julien²

Affiliation:

1. WCU hybrid materials program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea

2. Air Liquide, 28 Wadai, Tsukuba-Shi, Ibaraki Prefecture 300-4247, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm101694g

Reference28 articles.

1. Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum

2. Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System

3. Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition

4. Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

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