The development of sol–gel derived TiO2 thin films and corresponding memristor architectures-Reference-Cited by-同舟云学术

The development of sol–gel derived TiO2 thin films and corresponding memristor architectures

Published:2017 Issue:3 Volume:7 Page:1654-1663
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Prusakova Valentina¹²³⁴,Collini Cristian⁵⁶³⁴,Nardi Marco¹²³⁴⁷,Tatti Roberta⁷³⁴,Lunelli Lorenzo⁵⁸³⁴,Vanzetti Lia⁵⁹³⁴,Lorenzelli Leandro⁵⁶³⁴,Baldi Giacomo¹⁰²³⁴,Chiappini Andrea¹¹¹²³⁴,Chiasera Alessandro¹¹¹²³⁴,Ristic Davor¹³¹⁴¹⁵¹⁶¹⁷,Verucchi Roberto⁷³⁴,Bortolotti Mauro¹²³⁴,Dirè Sandra¹²³⁴

Affiliation:

1. Department of Industrial Engineering

2. University of Trento

3. 38123 Trento

4. Italy

5. FBK

6. CMM – MICROSYSTEMS

7. CNR-IMEM

8. LABSSAH

9. CMM – MNF

10. Department of Physics

11. CNR-IFN

12. CSMFO Lab.

13. Division of Materials Physics

14. Laboratory for Molecular Physics

15. Ruđer Bošković Institute

16. Zagreb

17. Croatia

Abstract

The electrical response of Pt/TiO₂/Pt with an atmosphere-controlled structure of a switching layer depends on electroforming parameters and architecture.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA25618J

Reference59 articles.

1. Cramming More Components Onto Integrated Circuits

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

3. Overview of emerging nonvolatile memory technologies

4. TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

5. Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

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