Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices
2. South China University of Technology
3. Guangzhou 510641
4. China
5. Department of Electronic Materials
Abstract
Highly-efficient GaN-based LEDs on Si(111) substrates were achieved using MOCVD with a suitable reactor pressure for the GaN nucleation layer growth.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02220C
Reference41 articles.
1. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers
2. Radiation effects in GaN materials and devices
3. Prospects of III-nitride optoelectronics grown on Si
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5. Thermal stability of GaN on (111) Si substrate
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