Abstract
New capabilities of the Berg–Barrett topographic method are demonstrated using a skew-asymmetric X-ray diffraction scheme for investigating structural changes near the surface of semiconductor materials. Specifying the X-ray extinction depth, the details of defects and strains are revealed with high resolution. Consequently, analysis of structural distortion of layers near the surface after various types of surface processing becomes more complete.
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Reference40 articles.
1. Afanas'ev, A. M., Aleksandrov, P. A. & Imamov, R. M. (1989). X-ray Diffraction Diagnostics of Submicron Layers. Moscow: Nauka.
2. X-ray diffraction under specular reflection conditions. Ideal crystals
3. Authier, A. (2001). Dynamical Theory of X-ray Diffraction. New York: Oxford University Press.
4. On X-Ray diffraction in an extremely asymmetric case
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献