A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results-Reference-Cited by-同舟云学术

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A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results

Published:2001-03-01 Issue:2 Volume:8 Page:860-862
ISSN:0909-0495
Container-title:Journal of Synchrotron Radiation
language:
Short-container-title:J Synchrotron Radiat

Author:

Hu Y. F.,Sham T. K.,Zou Z.,Xu G. Q.,Chan L.,Yates B. W.,Bancroft G. M.

Publisher

International Union of Crystallography (IUCr)

Subject

Instrumentation,Nuclear and High Energy Physics,Radiation

Link

http://journals.iucr.org/s/issues/2001/02/00/re5066/re5066.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Synthesis and study of highly dense and smooth TiN thin films;Materials Chemistry and Physics;2021-07

3. CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N;Journal of Vacuum Science & Technology A;2019-03

4. Unraveling the Origin of Visible Light Capture by Core–Shell TiO2 Nanotubes;Chemistry of Materials;2016-06-07

5. Thickness dependent microstructural and electrical properties of TiN thin films prepared by DC reactive magnetron sputtering;Ceramics International;2016-02

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