Thickness dependent microstructural and electrical properties of TiN thin films prepared by DC reactive magnetron sputtering-Reference-Cited by-同舟云学术

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Thickness dependent microstructural and electrical properties of TiN thin films prepared by DC reactive magnetron sputtering

Published:2016-02 Issue:2 Volume:42 Page:2642-2647
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Liang Hailong,Xu Jin,Zhou Dayu,Sun Xu,Chu Shichao,Bai Yizhen

Funder

National Natural Science Foundation of China

Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films;Kröger;J. Appl. Phys.,2002

2. Hard and wear-resistant titanium nitride coatings for cemented carbide cutting tools by pulsed high energy density plasma;Peng;Acta Mater.,2003

3. Formation of titanium nitride barrier layer in nickel–titanium shape memory alloys by nitrogen plasma immersion ion implantation for better corrosion resistance;Poon;Thin Solid Films,2005

4. Optimization of plasma parameters for high rate deposition of titanium nitride films as protective coating on bell-metal by reactive sputtering in cylindrical magnetron device;Borah;Appl. Surf. Sci.,2008

5. A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results;Hu;J. Synchrotron Radiat.,2001

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