Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases-Reference-Cited by-同舟云学术

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Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

Published:2016-02-02 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lee Woongkyu,Yoo Sijung,Yoon Kyung Jean,Yeu In Won,Chang Hye Jung,Choi Jung-Hae,Hoffmann-Eifert Susanne,Waser Rainer,Hwang Cheol Seong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep20550.pdf

Reference75 articles.

1. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects and Challenges. Adv. Mater. 21, 2632–2663 (2009).

2. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat Mater 6, 833–840 (2007).

3. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008).

4. Cho, B., Song, S., Ji, Y., Kim, T.-W. & Lee, T. Organic Resistive Memory Devices: Performance Enhancement, Integration and Advanced Architectures. Adv. Funct. Mater. 21, 2806–2829 (2011).

5. Kim, K. M., Jeong, D. S. & Hwang, C. S. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology 22, 254002 (2011).

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