Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

Author:

Semchenko Alina V.1,Ayvazyan Gagik Y.2ORCID,Malyutina-Bronskaya Viktoriya V.3ORCID,Khakhomov Sergei A.1ORCID,Kovalenko Dmitry L.1,Boiko Andrei A.4,Sidski Vitali V.1,Nestsiaronak Anton V.4,Mayevsky Alexander A.1,Danilchenko Konstantin D.1,Zhigulin Dmitry V.5,Pilipenko Vladimir A.5,Subasri R.6,Gaponenko Nikolai V.7

Affiliation:

1. Department of Physics and Information Technologies, Francisk Skorina Gomel State University, 104 Sovetskaya Street, 246028 Gomel, Belarus

2. Optoelectronic Devices Laboratory, National Polytechnic University of Armenia, Teryan 105, Yerevan 0009, Armenia

3. SSPA “Optics, Optoelectronics and Laser Technology”, Nezavisimost Ave 68-1, 220092 Minsk, Belarus

4. Research Laboratory “Technical Ceramics and Nanomaterials”, Sukhoi State Technical University of Gomel, 48 Prospect Octiabria, 246746 Gomel, Belarus

5. Joint Stock Company «INTEGRAL»—«INTEGRAL» Holding Managing Company, I.P. Kazintsa Street, 121A, 220108 Minsk, Belarus

6. Centre for Sol-Gel Coatings, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur, Hyderabad 500005, Telangana State, India

7. Laboratory of Nanophotonics, Belarusian State University of Informatics and Radioelectronics, 6 P. Browki Street, 220013 Minsk, Belarus

Abstract

In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3−xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3−xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed.

Funder

Belarusian Republic Foundation for Fundamental Research

Science Committee of the Republic of Armenia

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

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