Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep43659.pdf
Reference44 articles.
1. Lai, C. H. et al. Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention. Proc. IEEE VLSI Technol., 44–45 (2006).
2. Chen, G. et al. Low temperature atomic layer deposited HfO2 film for high performance charge trapping flash memory application. Semicond. Sci. Technol. 29, 0450519 (2014).
3. Chen, J. X., Xu, J. P., Liu, L. & Lai, P. T. Performance improvements of metal-oxide-nitride-oxide-silicon nonvolatile memory with ZrO2 charge-trapping layer by using nitrogen incorporation. Appl. Phys. Express 6, 084202 (2013).
4. Kim, H. J., Cha, S. Y. & Choi, D. J. Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses. Mater. Sci. Semicond. Process. 13, 9–12 (2010).
5. Pan, T. M. & Yeh, W. W. Polysilicon-oxide-nitride-oxide-silicon-type flash memory using an Y2O3 film as a charge trapping layer. Electrochem. Solid-State Lett. 11, G37 (2008).
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices;Nanomaterials;2023-06-01
2. Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors;Science and Technology of Advanced Materials;2023-05-23
3. Rod shaped zirconium titanate nanoparticles: Synthesis, comparison and systematic investigation of structural, photoluminescence, electrochemical sensing and supercapacitor properties;Ceramics International;2022-12
4. Improvement of corrosion and wear resistance of novel Zr-Ti-Al-V alloy with high strength and toughness by thermal nitridation treatment;Corrosion Science;2022-11
5. Defect generation in a data-storage layer by strong ion bombardment for multilevel non-volatile memory applications;Materials Today Nano;2022-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3