Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2Charge-Trapping Layer by Using Nitrogen Incorporation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=8/a=084202/pdf
Reference22 articles.
1. Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
2. Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells
3. Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications
4. Device characteristics of HfON charge-trap layer nonvolatile memory
5. Nitrided $\hbox{La}_{2}\hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications
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2. Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack;IEEE Journal of the Electron Devices Society;2022
3. Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer;Applied Physics Express;2019-06-21
4. Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory;Semiconductor Science and Technology;2018-10-25
5. Improved charge trapping characteristics of multilayered Zr x Si1− x O2 films with a bidirectional terraced bandgap structure;Applied Physics Express;2018-09-18
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