Defect generation in a data-storage layer by strong ion bombardment for multilevel non-volatile memory applications-Reference-Cited by-同舟云学术

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Defect generation in a data-storage layer by strong ion bombardment for multilevel non-volatile memory applications

Published:2022-08 Issue: Volume:19 Page:100226
ISSN:2588-8420
Container-title:Materials Today Nano
language:en
Short-container-title:Materials Today Nano

Author:

Park S.^ORCID,Seo T.,Jeon C.,Lee Y.K.,Chung Y.^ORCID

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Samsung

Korea Ministry of Science and ICT

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Nanoscale channel organic ferroelectric synaptic transistor array for high recognition accuracy neuromorphic computing;Li;Nano Energy,2021

2. Emerging memristive artificial synapses and neurons for energy-efficient neuromorphic computing;Choi;Adv. Mater.,2020

3. Memory devices and applications for in-memory computing;Sebastian;Nat. Nanotechnol.,2020

4. Emerging memory devices for neuromorphic computing;Upadhyay;Adv. Mater. Technol.,2019

5. Embedded 1-Mb ReRAM-based computing-in- memory macro with multibit input and weight for CNN-based AI edge processors;Xue;IEEE J. Solid State Circ.,2020

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses;Materials Today Nano;2023-06

2. Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation;Advanced Electronic Materials;2022-12-29

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