Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep07764.pdf
Reference30 articles.
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4. Wong, H. S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951–1970 (2012).
5. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges. Adv. Mater. 21, 2632–2663 (2009).
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