Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors-Reference-Cited by-同舟云学术

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Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

Published:2016-02 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Jeong Seong-Jun,Gu Yeahyun,Heo Jinseong,Yang Jaehyun,Lee Chang-Seok,Lee Min-Hyun,Lee Yunseong,Kim Hyoungsub,Park Seongjun,Hwang Sungwoo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep20907.pdf

Reference41 articles.

1. Geim, A. K. Graphene: status and prospects. Science 324, 1530–1534 (2009).

2. Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192–200 (2012).

3. Mayorov, A. S. et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. Nano Lett. 11, 2396–2399 (2011).

4. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).

5. Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature 438, 201–204 (2005).

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