Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate-Reference-Cited by-同舟云学术

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Published:2014-09-10 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Zhang Kexiong,Liang Hongwei,Liu Yang,Shen Rensheng,Guo Wenping,Wang Dongsheng,Xia Xiaochuan,Tao Pengcheng,Yang Chao,Luo Yingmin,Du Guotong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep06322.pdf

Reference47 articles.

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3. Alibart, F. & Strukov, D. B. Utilizing NDR effect to reduce switching threshold variations in memristive devices. Appl. Phys. A 111, 199–202 (2013).

4. Wernersson, L.-E., Ärlelid, M., Egard, M. & Lind, E. Gated tunnel diode in oscillator applications with high frequency tuning. Solid-State Electron. 53, 292-296 (2009).

5. Takahashi, T., Sato, M., Hirose, T. & Hara, N. Energy band control of GaAsSb-based backward diodes to improve sensitivity of millimeter-wave detection. Jpn. J. Appl. Phys. 49, 104101 (2010).

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