Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions-Reference-Cited by-同舟云学术

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions

Published:2016-06-06 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Stanford Michael G.,Pudasaini Pushpa Raj,Belianinov Alex,Cross Nicholas,Noh Joo Hyon,Koehler Michael R.,Mandrus David G.,Duscher Gerd,Rondinone Adam J.,Ivanov Ilia N.,Ward T. Zac,Rack Philip D.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep27276.pdf

Reference27 articles.

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2. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).

3. Terrones, H., López-Urías, F. & Terrones, M. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci. Rep. 3, 1549 (2013).

4. Yousefi, G. H. Optical properties of mixed transition metal dichalcogenide crystals. Mater. Lett. 9, 38–40 (1989).

5. Pradhan, N. R. et al. Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors. Sci. Rep. 5, 8979 (2015).

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